An Investigation on GIDL Mechanism of Program Disturbance in Sub-20nm NAND Flash Memory
نویسندگان
چکیده
Disturbance induced by GIDL are investigated. A new program disturbance phenomenon by boosted channel potential lowering by GIDL is found. In addition, temperature dependency of the disturbance by GIDL is measured. Finally, the structure and bias conditions to overcome the GIDL are suggested.
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